Part Number | IRFH6200TR2PBF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 20V 100A 5X6 PQFN |
Series | HEXFET |
Packaging | |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 49A (Ta), 100A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 1.1V @ 150µA |
Gate Charge (Qg) (Max) @ Vgs | 230nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 10890pF @ 10V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 3.6W (Ta), 156W (Tc) |
Rds On (Max) @ Id, Vgs | 0.95 mOhm @ 50A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PQFN (5x6) |
Package / Case | 8-PowerVDFN |
Image |
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