(5/5) based on 1 customer reviews
Description
MOSFET 2N-CH 30V 13A/28A PQFN Series: HEXFET? FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25～C: 13A, 28A Rds On (Max) @ Id, Vgs: 8.6 mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 2.35V @ 25米A Gate Charge (Qg) @ Vgs: 12nC @ 4.5V Input Capacitance (Ciss) @ Vds: 1060pF @ 15V Power - Max: 2.4W, 3.4W Operating Temperature: -55～C ~ 150～C (TJ) Mounting Type: Surface Mount Package / Case: 18-PowerVQFN Supplier Device Package: PQFN (5x6)
| Part Number | IRFH7911TR2PBF |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Arrays |
| Brand | Infineon Technologies AG |
| Description | MOSFET 2N-CH 30V 13A/28A PQFN |
| Series | HEXFET |
| Packaging | |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 13A, 28A |
| Rds On (Max) @ Id, Vgs | 8.6 mOhm @ 12A, 10V |
| Vgs(th) (Max) @ Id | 2.35V @ 25µA |
| Gate Charge (Qg) (Max) @ Vgs | 12nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 1060pF @ 15V |
| Power - Max | 2.4W, 3.4W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 18-PowerVQFN |
| Supplier Device Package | PQFN (5x6) |
| Image |  |
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