Part Number | IRFH8337TR2PBF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 30V 9.7A 5X6 PQFN |
Series | HEXFET |
Packaging | |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 12A (Ta), 35A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 2.35V @ 25µA |
Gate Charge (Qg) (Max) @ Vgs | 10nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 790pF @ 10V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 3.2W (Ta), 27W (Tc) |
Rds On (Max) @ Id, Vgs | 12.8 mOhm @ 16.2A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PQFN (5x6) |
Package / Case | 8-PowerTDFN |
Image |
IRFH8337TR2PBF
INFIENON
2200
0.94
CIS Ltd (CHECK IC SOLUTION LIMITED)
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Infinen
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1.85
MY Group (Asia) Limited
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INFLNEON
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ALPINE ELECTRONICS LTD
IRFH8337TR2PBF
Infineon Technologies A...
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3.67
ICK Internation (HK) Co., Limited
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