(4/5) based on 19 customer reviews
Description
MOSFET 2N-CH 25V 86A/303A PQFN Series: FASTIRFET? FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25～C: 86A, 303A Rds On (Max) @ Id, Vgs: 2.75 mOhm @ 27A, 10V Vgs(th) (Max) @ Id: 2.1V @ 35米A Gate Charge (Qg) @ Vgs: 20nC @ 4.5V Input Capacitance (Ciss) @ Vds: 1735pF @ 13V Power - Max: 156W Operating Temperature: -55～C ~ 150～C (TJ) Mounting Type: Surface Mount Package / Case: 32-PowerWFQFN Supplier Device Package: 32-PQFN (6x6)
| Part Number | IRFHE4250DTRPBF |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Arrays |
| Brand | Infineon Technologies AG |
| Description | MOSFET 2N-CH 25V 86A/303A PQFN |
| Series | FASTIRFET |
| Packaging | 2 N-Channel (Dual) |
| FET Type | |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 25V |
| Current - Continuous Drain (Id) @ 25°C | 86A, 303A |
| Rds On (Max) @ Id, Vgs | 2.75 mOhm @ 27A, 10V |
| Vgs(th) (Max) @ Id | 2.1V @ 35µA |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 1735pF @ 13V |
| Power - Max | 156W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 32-PowerWFQFN |
| Supplier Device Package | 32-PQFN (6x6) |
| Image |  |
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