Description
MOSFET 2N-CH 100V 2.3A 8PQFN Series: HEXFET? FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25~C: 2.3A Rds On (Max) @ Id, Vgs: 195 mOhm @ 2.9A, 10V Vgs(th) (Max) @ Id: 4V @ 10米A Gate Charge (Qg) @ Vgs: 6.3nC @ 10V Input Capacitance (Ciss) @ Vds: 251pF @ 25V Power - Max: 2.3W Operating Temperature: -55~C ~ 150~C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: 8-PQFN (3.3x3.3), Power33
Part Number | IRFHM792TR2PBF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Arrays |
Brand | Infineon Technologies AG |
Description | MOSFET 2N-CH 100V 2.3A 8PQFN |
Series | HEXFET |
Packaging | |
FET Type | 2 N-Channel (Dual) |
FET Feature | Standard |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 2.3A |
Rds On (Max) @ Id, Vgs | 195 mOhm @ 2.9A, 10V |
Vgs(th) (Max) @ Id | 4V @ 10µA |
Gate Charge (Qg) (Max) @ Vgs | 6.3nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 251pF @ 25V |
Power - Max | 2.3W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 8-PowerVDFN |
Supplier Device Package | 8-PQFN (3.3x3.3), Power33 |
Image |
IRFHM792TR2PBF
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