Part Number | IRFHM830DTRPBF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 30V 20A PQFN |
Series | HEXFET |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 20A (Ta), 40A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 2.35V @ 50µA |
Gate Charge (Qg) (Max) @ Vgs | 27nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1797pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 2.8W (Ta), 37W (Tc) |
Rds On (Max) @ Id, Vgs | 4.3 mOhm @ 20A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PQFN (3x3) |
Package / Case | 8-VQFN Exposed Pad |
Image |
IRFHM830DTRPBF
INFIENON
1591
1.75
Shenzhen Tecrutter Technology Co. , Ltd.
IRFHM830DTRPBF
Infinen
3701
3.0975
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
IRFHM830DTRPBF
INFLNEON
9063
4.445
KHWY GROUP LIMITED
IRFHM830DTRPBF
Infineon Technologies A...
9262
5.7925
ATLANTIC TECHNOLOGY LIMITED
IRFHM830DTRPBF
INFINEON/IR
3742
7.14
WIN AND WIN ELECTRONICS LIMITED