Part Number | IRFHM831TRPBF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 30V 14A PQFN |
Series | HEXFET |
Packaging | |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 14A (Ta), 40A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 2.35V @ 25µA |
Gate Charge (Qg) (Max) @ Vgs | 16nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1050pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 2.5W (Ta), 27W (Tc) |
Rds On (Max) @ Id, Vgs | 7.8 mOhm @ 12A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PQFN (3x3) |
Package / Case | 8-PowerTDFN |
Image |
IRFHM831TRPBF
INFIENON
2330
0.4
Rs (Int'l) Electronics Limited
IRFHM831TRPBF
Infinen
5815
1.2175
Shenzhen Xiufa Electronic Tech
IRFHM831TRPBF
INFLNEON
9527
2.035
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
IRFHM831TRPBF
Infineon Technologies A...
7252
2.8525
Hong Kong Capital Industrial Co.,Ltd
IRFHM831TRPBF
INFINEON/IR
1726
3.67
KHWY GROUP LIMITED