Description
MOSFET 2N-CH 30V 11A 8PQFN Series: HEXFET? FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25~C: 11A Rds On (Max) @ Id, Vgs: 14.9 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.35V @ 25米A Gate Charge (Qg) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) @ Vds: 1165pF @ 10V Power - Max: 2.7W Operating Temperature: -55~C ~ 150~C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: 8-PQFN (3.3x3.3), Power33
Part Number | IRFHM8363TR2PBF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Arrays |
Brand | Infineon Technologies AG |
Description | MOSFET 2N-CH 30V 11A 8PQFN |
Series | HEXFET |
Packaging | |
FET Type | 2 N-Channel (Dual) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 11A |
Rds On (Max) @ Id, Vgs | 14.9 mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id | 2.35V @ 25µA |
Gate Charge (Qg) (Max) @ Vgs | 15nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1165pF @ 10V |
Power - Max | 2.7W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 8-PowerVDFN |
Supplier Device Package | 8-PQFN (3.3x3.3), Power33 |
Image |
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