Part Number | IRFL014NPBF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 55V 1.9A SOT223 |
Series | HEXFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 55V |
Current - Continuous Drain (Id) @ 25°C | 1.9A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 11nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 190pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 1W (Ta) |
Rds On (Max) @ Id, Vgs | 160 mOhm @ 1.9A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | SOT-223 |
Package / Case | TO-261-4, TO-261AA |
Image |
IRFL014NPBF
INFIENON
5000
0.35
Good Time Electronic Group Limited
IRFL014NPBF
Infinen
35200
1.3525
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
IRFL014NPBF
INFLNEON
2940
2.355
ALLCHIPS ELECTRONICS LIMITED
IRFL014NPBF
Infineon Technologies A...
13862
3.3575
N&S Electronic Co., Limited
IRFL014NPBF FL014N
INFINEON/IR
11069
4.36
N&S Electronic Co., Limited