Part Number | IRFL1006PBF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 60V 1.6A SOT223 |
Series | HEXFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 1.6A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 8nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 160pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 1W (Ta) |
Rds On (Max) @ Id, Vgs | 220 mOhm @ 1.6A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | SOT-223 |
Package / Case | TO-261-4, TO-261AA |
Image |
IRFL1006PBF
INFIENON
3500
1.17
Yingxinyuan INT'L (Group) Limited
IRFL1006PBF
Infinen
28770
2.5525
ATLANTIC TECHNOLOGY LIMITED
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INFLNEON
18650
3.935
Fairstock HK Limited
IRFL1006PBF
Infineon Technologies A...
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5.3175
Acon Electronics Limited
IRFL1006PBF
INFINEON/IR
19712
6.7
CIS Ltd (CHECK IC SOLUTION LIMITED)