Description
DATASHEET Oct 5, 1998 IRFP140N . Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible IRFP140 . SiHFP140. ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted). PARAMETER. SYMBOL. LIMIT. UNIT. Drain-Source Voltage. VDS.
Part Number | IRFP140N |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 100V 33A TO-247AC |
Series | HEXFET |
Packaging | Bulk |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 33A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 94nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1400pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 140W (Tc) |
Rds On (Max) @ Id, Vgs | 52 mOhm @ 16A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-247AC |
Package / Case | TO-247-3 |
Image |
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