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Description
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT. Power MOSFET. IRFP22N50A Jun 23, 1999 Parameter. Max. Units. ID @ TC = 25 C. Continuous Drain Current, VGS @ 10V. 20. ID @ TC = 100 C. Continuous Drain Current, VGS @ 10V. In fact, new low-charge MOSFETs such as the International Rectifier IRFP460A and IRFP22N50A significantly move performance benchmarks just when the IRFP22N50A . 500. 230. 22. 14. 80. 34.7. 0.45. 277. IRFP22N50APBF. 500. 230. 22. 14. 80. 34.7. 0.45. 277. IRFP23N50L. 500. 235. 23. 15. 100. 48. 0.34. 370.
| Part Number | IRFP22N50A |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Infineon Technologies AG |
| Description | MOSFET N-CH 500V 22A TO-247AC |
| Series | - |
| Packaging | Tube |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 500V |
| Current - Continuous Drain (Id) @ 25°C | 22A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 120nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 3450pF @ 25V |
| Vgs (Max) | - |
| FET Feature | - |
| Power Dissipation (Max) | 277W (Tc) |
| Rds On (Max) @ Id, Vgs | 230 mOhm @ 13A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247-3 |
| Package / Case | TO-247-3 |
| Image |  |
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