Infineon Technologies AG

Description

DESCRIPTION. Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low Jul 10, 2004 Parameter. Max. Units. ID @ TC = 25 C. Continuous Drain Current, VGS @ 10V. 30. ID @ TC = 100 C. Continuous Drain Current, VGS @ 10V. on-resistance and cost-effectiveness. The TO-247 package is preferred for commercial industrial applications _ where higher power levels preclude the use of Jan 25, 2001 Advanced HEXFET Power MOSFETs from International. Rectifier utilize advanced processing techniques to achieve extremely low General Description. These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar,. DMOS technology.