Description
Feb 6, 2008 Absolute Maximum Ratings. Symbol. Parameter. Units. ID @ TC = 25 C. Continuous Drain Current, VGS @ 10V (Silicon Limited). ID @ TC IRFP4368 . 75V. 350A. 1.85 mOhm. 380 nC. TO-247AC. Through-Hole Packages 100 - 250V. Part Number. Voltage. ID @ TC = 25 C. RDs(on) max @ 10V. Jun 23, 1999 Parameter. Max. Units. ID @ TC = 25 C. Continuous Drain Current, VGS @ 10V. 20. ID @ TC = 100 C. Continuous Drain Current, VGS @ 10V. IRFP4368 . 100. 8.7. 190. 6.9. IRFU120Z. 18. 72.5. 15. IRFB4212. 36. 26.5. 42. IRF540Z. 42. 36. 73.3. IRFP150M. 43. 9.3. 81. IRFI4410Z. 56. 18. 69. IRFU3710Z. Dec 15, 2009 Description. This HEXFET Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch applications in Plasma
Part Number | IRFP4368 |
Brand | Infineon Technologies AG |
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IRFP4368
INFIENON
22702
1.57
HK HEQING ELECTRONICS LIMITED
IRFP4368
Infinen
169
2.3225
AIC Semiconductor Co., Limited
IRFP4368
INFLNEON
22703
3.075
Yingxinyuan INT'L (Group) Limited
IRFP4368
Infineon Technologies A...
790
3.8275
WIN AND WIN ELECTRONICS LIMITED
IRFP4368
INFINEON/IR
10000
4.58
Xiefeng (HK) INT'L Electronics Limited