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Description
Jun 23, 1999 IRFP460A . SMPS MOSFET. HEXFET Power MOSFET l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed Document Number: 91234 www.vishay.com. S09-1284-Rev. B, 13-Jul-09. 1. Power MOSFET. IRFP460A , SiHFP460A. Vishay Siliconix. FEATURES. Low Gate the losses of the IGBT are approximately equal to the losses of an IRFP460 if the such as the International Rectifier IRFP460A and IRFP22N50A significantly. nC whereas the IRFP460 (size 6) demands 120 nC, and both are typical values. There are two specified parameters contained within the total gate. VDSS. TJ. = 25 C to 150 C. 500. V. VDGR. TJ. = 25 C to 150 C; RGS = 1 M . 500. V. VGS. Continuous. 20. V. VGSM. Transient. 30. V. ID25. TC. = 25 C.
| Part Number | IRFP460A |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Infineon Technologies AG |
| Description | MOSFET N-CH 500V 20A TO-247AC |
| Series | - |
| Packaging | Tube |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 500V |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 105nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 3100pF @ 25V |
| Vgs (Max) | - |
| FET Feature | - |
| Power Dissipation (Max) | 280W (Tc) |
| Rds On (Max) @ Id, Vgs | 270 mOhm @ 12A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247-3 |
| Package / Case | TO-247-3 |
| Image |  |
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