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Description
Aug 9, 2008 IRFP4668PbF . VDSS. 200V. RDS(on) typ. 8.0m: max. 9.7m: ID. 130A. Absolute Maximum Ratings. Symbol. Parameter. Units. ID @ TC = 25 C. Page 1. 0. 0. 1. 1. 2. 2. 3. 3. 4. 4. 5. 5. 6. 6. 7. 7. 8. 8. 9. 9. 10. 10. 11. 11. A. A. B. B. C. C. D. D. E. E. F. F. V1. 50-84V. R14_1. 0.005 . Q1_1. IRFP4668PbF . Q2_1. R116. 100 . C47. 0.1 F. V1. 21V. V2. 21V. V3. 21V. V4. 21V. MCU+. R119. 0.005 . Q41. IRFP4668PbF . Q42 IRFP4668PbF . R115 load. Charging current. IRFP4668PbF . R44. 100 . R45. 100 . C29. 0.1 F. BAT0. C30. 0.1 F. C31. 0.1 F. BAT0. BAT0. BAT0. R39. 2.2k . R41. 10M . Q3 IRFP4668PbF . R42. 1M . Oct 24, 2007 Description. The IRF8707PbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the industry standard SO-8 package.
| Part Number | IRFP4668PBF |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Infineon Technologies AG |
| Description | MOSFET N-CH 200V 130A TO-247AC |
| Series | HEXFET |
| Packaging | Tube |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 200V |
| Current - Continuous Drain (Id) @ 25°C | 130A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 241nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 10720pF @ 50V |
| Vgs (Max) | ±30V |
| FET Feature | - |
| Power Dissipation (Max) | 520W (Tc) |
| Rds On (Max) @ Id, Vgs | 9.7 mOhm @ 81A, 10V |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247AC |
| Package / Case | TO-247-3 |
| Image |  |
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