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Description
Mar 14, 2011 SiHFP9140-E3. SnPb. IRFP9140 . SiHFP9140. ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted). PARAMETER. SYMBOL. Document Number: 90129 www.vishay.com. Revision: 22-Jun-10. 1. R-C Thermal Model Parameters. IRFP9140_RC, SiHFP9140_RC. Vishay Siliconix. Mar 16, 1998 IRFP9140N. PRELIMINARY. HEXFET Power MOSFET. PD - 9.1492A. Fifth Generation HEXFETs from International Rectifier utilize advanced Sep 22, 2003 Absolute Maximum Ratings. Parameter. Units. ID @ VGS = 0V, TC = 25 C. Continuous Drain Current. -18. ID @ VGS = 0V, TC = 100 C. Sep 23, 2003 www.irf.com. Class D Audio Amplifier Design. Class D Amplifier Introduction. Gate Driver. MOSFET. Package. Design Example. Theory of
| Part Number | IRFP9140 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Infineon Technologies AG |
| Description | MOSFET P-CH 100V 21A TO-247AC |
| Series | - |
| Packaging | Tube |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 21A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 61nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1400pF @ 25V |
| Vgs (Max) | - |
| FET Feature | - |
| Power Dissipation (Max) | 180W (Tc) |
| Rds On (Max) @ Id, Vgs | 200 mOhm @ 13A, 10V |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247-3 |
| Package / Case | TO-247-3 |
| Image |  |
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