Part Number | IRFPF50PBF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 900V 6.7A TO-247AC |
Series | - |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 900V |
Current - Continuous Drain (Id) @ 25°C | 6.7A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 200nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 2900pF @ 25V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 190W (Tc) |
Rds On (Max) @ Id, Vgs | 1.6 Ohm @ 4A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-247-3 |
Package / Case | TO-247-3 |
Image |
IRFPF50PBF
INFIENON
25
0.51
H.K. GuoXin Electronics Technology Limited
IRFPF50PBF
Infinen
1000
2.265
Sun Kai Wah ( H.K. ) Electronics Co.
IRFPF50PBF
INFLNEON
1000
4.02
HK HORIZON MICROELECTRONICS LIMITED
IRFPF50PBF M
Infineon Technologies A...
16000
5.775
CIS Ltd (CHECK IC SOLUTION LIMITED)
IRFPF50PBF
INFINEON/IR
8675
7.53
HK DAKINGS TECHNOLOGY LIMITED