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Description
Document Number: 91260 www.vishay.com. S11-0111-Rev. C, 07-Feb-11. 1. Power MOSFET. IRFPS40N50L , SiHFPS40N50L. Vishay Siliconix. FEATURES. IRFPS40N50L . 22. Table 4. Body diode dv/dt comparison. As discussed above, the charges within the body diode of the MOSFET in a ZVS converter must be. Switchmode power supplies. Microprocessor interfaces. MOSFETs. IrFpS40N50L , SiHFpS40N50L power MOSFETs. N-channel 500 V MOSFETs in Super-247. IRFPS35N50L. 116. 85 C/85%RH. 100. 77. 500. 0. 0. 0. 0. IRFPS39N60K. 136. 85 C/85%RH. 100. 80. 1000. 0. 0. 0. 0. IRFPS40N50L . 123. 85 C/85%RH. 100.
| Part Number | IRFPS40N50L |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Infineon Technologies AG |
| Description | MOSFET N-CH 500V 46A SUPER247 |
| Series | - |
| Packaging | Tube |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 500V |
| Current - Continuous Drain (Id) @ 25°C | 46A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 380nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 8110pF @ 25V |
| Vgs (Max) | - |
| FET Feature | - |
| Power Dissipation (Max) | 540W (Tc) |
| Rds On (Max) @ Id, Vgs | 100 mOhm @ 28A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | SUPER-247 (TO-274AA) |
| Package / Case | TO-274AA |
| Image |  |
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