Part Number | IRFR220PBF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 200V 4.8A DPAK |
Series | - |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25°C | 4.8A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 14nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 260pF @ 25V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 2.5W (Ta), 42W (Tc) |
Rds On (Max) @ Id, Vgs | 800 mOhm @ 2.9A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D-Pak |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Image |
IRFR220PBF
INFIENON
18000
0.37
MY Group (Asia) Limited
IRFR220PbF
Infinen
5000000
1.3175
Hongkong Shengshi Electronics Limited
IRFR220PBF
INFLNEON
2173
2.265
HK HEQING ELECTRONICS LIMITED
IRFR220PBF
Infineon Technologies A...
9100
3.2125
CIS Ltd (CHECK IC SOLUTION LIMITED)
IRFR220PBF
INFINEON/IR
5000
4.16
Ande Electronics Co., Limited