Part Number | IRFR3412PBF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 100V 48A DPAK |
Series | HEXFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 48A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 5.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 89nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 3430pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 140W (Tc) |
Rds On (Max) @ Id, Vgs | 25 mOhm @ 29A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D-Pak |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Image |
IRFR3412PBF
INFIENON
18500
1.15
KDH SEMICONDUCTOR CO., LIMITED
IRFR3412PBF
Infinen
17500
2.1225
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
IRFR3412PBF
INFLNEON
29500
3.095
N&S Electronic Co., Limited
IRFR3412PBF
Infineon Technologies A...
6000
4.0675
FLOWER GROUP(HK)CO.,LTD
IRFR3412PBF
INFINEON/IR
350000
5.04
Yingxinyuan INT'L (Group) Limited