Part Number | IRFR3709Z |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 30V 86A DPAK |
Series | HEXFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 86A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 2.25V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 26nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 2330pF @ 15V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 79W (Tc) |
Rds On (Max) @ Id, Vgs | 6.5 mOhm @ 15A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D-Pak |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Image |
IRFR3709Z
INFIENON
4366
0.74
HK HEQING ELECTRONICS LIMITED
IRFR3709Z
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Hong Kong Capital Industrial Co.,Ltd
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Shenzhen WTX Capacitor Co., Ltd.
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HK FEILIDI ELECTRONIC CO., LIMITED