Description
Dec 13, 2004 Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that. HEXFET Power MOSFETs are well known for, provides.
Part Number | IRFR5305TRRPBF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET P-CH 55V 31A DPAK |
Series | HEXFET |
Packaging | Tape & Reel (TR) |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 55V |
Current - Continuous Drain (Id) @ 25°C | 31A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 63nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1200pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 110W (Tc) |
Rds On (Max) @ Id, Vgs | 65 mOhm @ 16A, 10V |
Operating Temperature | - |
Mounting Type | Surface Mount |
Supplier Device Package | D-Pak |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Image |
IRFR5305TRRPBF
INFIENON
55200
0.78
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
IRFR5305TRRPBF
Infinen
6028
1.8675
Viassion Technology Co., Limited
IRFR5305TRRPBF
INFLNEON
50000
2.955
E-Future Co., Limited
IRFR5305TRRPBF
Infineon Technologies A...
55000
4.0425
Yingxinyuan INT'L (Group) Limited
IRFR5305TRRPBF
INFINEON/IR
3151
5.13
ATLANTIC TECHNOLOGY LIMITED