Description
Notes through are on page 11 www.irf.com. 1. 4/26/00. IRFB23N20D. IRFS23N20D . IRFSL23N20D. SMPS MOSFET. HEXFET Power MOSFET. VDSS. Jul 20, 2004 IRFS23N20D . TO-220AB. IRFB23N20D. TO-262. IRFSL23N20D. Parameter. Max . Units. ID @ TC = 25 C. Continuous Drain Current, VGS @
Part Number | IRFS23N20D |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 200V 24A D2PAK |
Series | HEXFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25°C | 24A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 5.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 86nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1960pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 3.8W (Ta), 170W (Tc) |
Rds On (Max) @ Id, Vgs | 100 mOhm @ 14A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D2PAK |
Package / Case | TO-263-3, D²ÂPak (2 Leads + Tab), TO-263AB |
Image |
IRFS23N20D
INFIENON
55200
0.49
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
IRFS23N20D
Infinen
1000
1.43
MY Group (Asia) Limited
IRFS23N20D
INFLNEON
100
2.37
Xinnlinx Electronics Pte Ltd
IRFS23N20D
Infineon Technologies A...
45500
3.31
Analog Technology Limited
IRFS23N20D
INFINEON/IR
50000
4.25
C & I Semiconductors Co., Limited