Part Number | IRFS3307PBF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 75V 120A D2PAK |
Series | HEXFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 75V |
Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 150µA |
Gate Charge (Qg) (Max) @ Vgs | 180nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 5150pF @ 50V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 200W (Tc) |
Rds On (Max) @ Id, Vgs | 6.3 mOhm @ 75A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D2PAK |
Package / Case | TO-263-3, D²ÂPak (2 Leads + Tab), TO-263AB |
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IRFS3307PBF
INFIENON
10000
0.2
Hong Kong Shun Ye Electronics Co., Limited
IRFS3307PBF
Infinen
33800
1.545
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
IRFS3307PBF
INFLNEON
18650
2.89
Fairstock HK Limited
IRFS3307PBF
Infineon Technologies A...
23503
4.235
OCEANIA INTERNATIONAL INDUSTRIAL LIMITED
IRFS3307PBF
INFINEON/IR
45500
5.58
Analog Technology Limited