Part Number | IRFS38N20DPBF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 200V 43A D2PAK |
Series | HEXFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25°C | 43A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 91nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 2900pF @ 25V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 3.8W (Ta), 300W (Tc) |
Rds On (Max) @ Id, Vgs | 54 mOhm @ 26A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D2PAK |
Package / Case | TO-263-3, D²ÂPak (2 Leads + Tab), TO-263AB |
Image |
IRFS38N20DPBF
INFIENON
510
1.7
HK HEQING ELECTRONICS LIMITED
IRFS38N20DPBF
Infinen
16000
2.6575
Finestock Electronics HK Limited
IRFS38N20DPBF
INFLNEON
3925
3.615
CIS Ltd (CHECK IC SOLUTION LIMITED)
IRFS38N20DPBF
Infineon Technologies A...
5000
4.5725
Ande Electronics Co., Limited
IRFS38N20DPBF
INFINEON/IR
55200
5.53
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED