Part Number | IRFS4510PBF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 100V 61A D2PAK |
Series | HEXFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 61A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs | 87nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 3180pF @ 50V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 140W (Tc) |
Rds On (Max) @ Id, Vgs | 13.9 mOhm @ 37A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D2PAK |
Package / Case | TO-263-3, D²ÂPak (2 Leads + Tab), TO-263AB |
Image |
IRFS4510PBF
INFIENON
55200
0.15
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
IRFS4510PBF
Infinen
16000
1.0425
Finestock Electronics HK Limited
IRFS4510PBF
INFLNEON
4598
1.935
Yingxinyuan INT'L (Group) Limited
IRFS4510PBF
Infineon Technologies A...
25000
2.8275
N&S Electronic Co., Limited
IRFS4510PBF
INFINEON/IR
11018
3.72
N&S Electronic Co., Limited