Part Number | IRFS59N10DPBF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 100V 59A D2PAK |
Series | HEXFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 59A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 5.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 114nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 2450pF @ 25V |
Vgs (Max) | ±30V |
FET Feature | - |
Power Dissipation (Max) | 3.8W (Ta), 200W (Tc) |
Rds On (Max) @ Id, Vgs | 25 mOhm @ 35.4A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D2PAK |
Package / Case | TO-263-3, D²ÂPak (2 Leads + Tab), TO-263AB |
Image |
IRFS59N10DPBF
INFIENON
938
0.3
HK FEILIDI ELECTRONIC CO., LIMITED
IRFS59N10DPBF
Infinen
15000
1.3925
Ande Electronics Co., Limited
IRFS59N10DPBF
INFLNEON
33422
2.485
OCEANIA INTERNATIONAL INDUSTRIAL LIMITED
IRFS59N10DPBF
Infineon Technologies A...
32000
3.5775
ShenZhen YueXuan Technology Co,.Ltd.
IRFS59N10DPBF
INFINEON/IR
65500
4.67
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED