Part Number | IRFSL23N20D102P |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 200V 24A TO-262 |
Series | HEXFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25°C | 24A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 5.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 86nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1960pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 3.8W (Ta), 170W (Tc) |
Rds On (Max) @ Id, Vgs | 100 mOhm @ 14A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-262 |
Package / Case | TO-262-3 Long Leads, I²ÂPak, TO-262AA |
Image |
IRFSL23N20D102P
INFIENON
8077
1.59
Dedicate Electronics (HK) Limited
IRFSL23N20D102P
Infinen
2188
2.635
CIS Ltd (CHECK IC SOLUTION LIMITED)
IRFSL23N20D102P
INFLNEON
9269
3.68
Finestock Electronics HK Limited
IRFSL23N20D102P
Infineon Technologies A...
1837
4.725
Ande Electronics Co., Limited
IRFSL23N20D102P
INFINEON/IR
6834
5.77
MY Group (Asia) Limited