Part Number | IRFSL3107PBF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 75V 195A TO262 |
Series | HEXFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 75V |
Current - Continuous Drain (Id) @ 25°C | 195A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 240nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 9370pF @ 50V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 370W (Tc) |
Rds On (Max) @ Id, Vgs | 3 mOhm @ 140A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-262 |
Package / Case | TO-262-3 Long Leads, I²ÂPak, TO-262AA |
Image |
IRFSL3107PBF
INFIENON
553
0.09
Finestock Electronics HK Limited
IRFSL3107PBF
Infinen
3719
0.7775
Redstar Electronic Limited
IRFSL3107PBF
INFLNEON
8388
1.465
HONGKONG SINIKO ELECTRONIC LIMITED
IRFSL3107PBF
Infineon Technologies A...
3242
2.1525
Ande Electronics Co., Limited
IRFSL3107PBF
INFINEON/IR
6330
2.84
N&S Electronic Co., Limited