Part Number | IRFSL4227PBF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 200V 62A TO-262 |
Series | HEXFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25°C | 62A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 98nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 4600pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 330W (Tc) |
Rds On (Max) @ Id, Vgs | 26 mOhm @ 46A, 10V |
Operating Temperature | -40°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-262 |
Package / Case | TO-262-3 Long Leads, I²ÂPak, TO-262AA |
Image |
IRFSL4227PBF
INFIENON
1000
0.54
MY Group (Asia) Limited
IRFSL4227PBF
Infinen
2000
1.0425
Bonase Electronics (HK) Co., Limited
IRFSL4227PBF
INFLNEON
8269
1.545
CIS Ltd (CHECK IC SOLUTION LIMITED)
IRFSL4227PBF
Infineon Technologies A...
9023
2.0475
Yingxinyuan INT'L (Group) Limited
IRFSL4227PBF
INFINEON/IR
7308
2.55
Ande Electronics Co., Limited