Part Number | IRFSL4610PBF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 100V 73A TO-262 |
Series | HEXFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 73A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs | 140nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 3550pF @ 50V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 190W (Tc) |
Rds On (Max) @ Id, Vgs | 14 mOhm @ 44A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-262 |
Package / Case | TO-262-3 Long Leads, I²ÂPak, TO-262AA |
Image |
IRFSL4610PBF
INFIENON
3405
0.46
HK HEQING ELECTRONICS LIMITED
IRFSL4610PBF
Infinen
4446
1.3925
MY Group (Asia) Limited
IRFSL4610PBF
INFLNEON
8064
2.325
Yingxinyuan INT'L (Group) Limited
IRFSL4610PBF
Infineon Technologies A...
8547
3.2575
Cicotex Electronics (HK) Limited
IRFSL4610PBF
INFINEON/IR
7123
4.19
ATLANTIC TECHNOLOGY LIMITED