Part Number | IRFU220N |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 200V 5A I-PAK |
Series | HEXFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25°C | 5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 23nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 300pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 43W (Tc) |
Rds On (Max) @ Id, Vgs | 600 mOhm @ 2.9A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | IPAK (TO-251) |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
Image |
IRFU220N
INFIENON
738
1.51
HK HEQING ELECTRONICS LIMITED
IRFU220N
Infinen
42580
1.775
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
IRFU220N
INFLNEON
3227
2.04
Belt (HK) Electronics Co
IRFU220N
Infineon Technologies A...
200000
2.305
Shenzhen WTX Capacitor Co., Ltd.
IRFU220N
INFINEON/IR
21100
2.57
N&S Electronic Co., Limited