Part Number | IRFU5410 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET P-CH 100V 13A I-PAK |
Series | HEXFET |
Packaging | Tube |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 13A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 58nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 760pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 66W (Tc) |
Rds On (Max) @ Id, Vgs | 205 mOhm @ 7.8A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | IPAK (TO-251) |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
Image |
IRFU5410
INFIENON
10000
0.3
Shenzhen Taochip Electronic Co.,Ltd
IRFU5410
Infinen
925
1.2175
KYO Inc.
IRFU5410
INFLNEON
55200
2.135
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
IRFU5410
Infineon Technologies A...
6000
3.0525
Shenzhen Qiangneng Electronics Co., Ltd.
IRFU5410
INFINEON/IR
79
3.97
Yingxinyuan INT'L (Group) Limited