Infineon Technologies AG

Description

Sep 13, 1999 HEXFET Power MOSFET. IRFZ24N . Fifth Generation HEXFET power MOSFETs from. International Rectifier utilize advanced processing. IRFZ24N . HEXFET Power MOSFET www.artschip.com. 1. Advanced Process Technology. Dynamic dv/dt Rating. 175 Operating Temperature. DESCRIPTION. Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low Oct 2, 2004 Fifth Generation HEXFET power MOSFETs from. International Rectifier utilize advanced processing techniques to achieve the lowest possible Sep 22, 1997 Uses IRFZ24N data and test conditions. Parameter. Min. Typ. Max. Units. Conditions. IS. Continuous Source Current. MOSFET symbol.