Part Number | IRFZ46NLPBF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 55V 53A TO-262 |
Series | HEXFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 55V |
Current - Continuous Drain (Id) @ 25°C | 53A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 72nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1696pF @ 25V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 3.8W (Ta), 107W (Tc) |
Rds On (Max) @ Id, Vgs | 16.5 mOhm @ 28A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-262 |
Package / Case | TO-262-3 Long Leads, I²ÂPak, TO-262AA |
Image |
Hot Offer
IRFZ46NLPBF
INFINEON/IR
5376
4.77
Tengyi Electronics (HK) Limited
IRFZ46NLPBF
INFIENON
9905
0.59
Ysx Tech Co., Limited
IRFZ46NLPBF
Infinen
9547
1.635
Cinty Int'l (HK) Industry Co., Limited
IRFZ46NLPBF
INFLNEON
2495
2.68
CHENGWING INTERNATIONAL LIMITED
IRFZ46NLPBF
Infineon Technologies A...
2861
3.725
N&S Electronic Co., Limited