Part Number | IRFZ46NS |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 55V 53A D2PAK |
Series | HEXFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 55V |
Current - Continuous Drain (Id) @ 25°C | 53A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 72nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1696pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 3.8W (Ta), 107W (Tc) |
Rds On (Max) @ Id, Vgs | 16.5 mOhm @ 28A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D2PAK |
Package / Case | TO-263-3, D²ÂPak (2 Leads + Tab), TO-263AB |
Image |
IRFZ46NS
INFIENON
3366
0.22
Finestock Electronics HK Limited
IRFZ46NS
Infinen
6575
1.1925
HK HEQING ELECTRONICS LIMITED
IRFZ46NS
INFLNEON
5546
2.165
N&S Electronic Co., Limited
IRFZ46NS
Infineon Technologies A...
4499
3.1375
N&S Electronic Co., Limited
IRFZ46NS
INFINEON/IR
4572
4.11
WIN AND WIN ELECTRONICS LIMITED