Description
Jan 20, 2010 Page 1. Parameter. Max. Units. VCES. Collector-to-Emitter Breakdown Voltage. 600. V. IC @ TC = 25 C. Continuous Collector Current. 19. Nov 1, 2004 Reference Standard IR packaged part ( for design ) : IRG4BC20S . Parameter. Description. Guaranteed (Min/Max). Test Conditions. VCE (on). IRGS10B60KD. IRGB10B60KD IRGIB10B60KD1. 600. 11. 2.1. 12. 10. IRG4BC20MD-S IRG4BC20MD. 600. 10. 1.4. 1. IRG4BC20SD-S IRG4BC20S (D). 600. 10.
Part Number | IRG4BC20S |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - IGBTs - Single |
Brand | Infineon Technologies AG |
Description | IGBT 600V 19A 60W TO220AB |
Series | - |
Packaging | Tube |
IGBT Type | - |
Voltage - Collector Emitter Breakdown (Max) | 600V |
Current - Collector (Ic) (Max) | 19A |
Current - Collector Pulsed (Icm) | 38A |
Vce(on) (Max) @ Vge, Ic | 1.6V @ 15V, 10A |
Power - Max | 60W |
Switching Energy | 120µJ (on), 2.05mJ (off) |
Input Type | Standard |
Gate Charge | 27nC |
Td (on/off) @ 25°C | 27ns/540ns |
Test Condition | 480V, 10A, 50 Ohm, 15V |
Reverse Recovery Time (trr) | - |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-220-3 |
Supplier Device Package | TO-220AB |
Image |
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Fairstock HK Limited
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