(5/5) based on 12 customer reviews
Description
Apr 24, 2000 (1.6mm from case ). C. Mounting torque, 6-32 or M3 screw. 10 lbf in (1.1N m). IRG4BC30W . INSULATED GATE BIPOLAR TRANSISTOR. Aug 13, 1998 Soldering Temperature, for 10 seconds. 300 (0.063 in. (1.6mm from case ). C. IRG4BC30W -S. INSULATED GATE BIPOLAR TRANSISTOR. WARP SpeedTM IGBT Substituted : IRG4BC30W , TO-220 package SpeedTM IGBT ( IRG4BC30W ) running at 100KHz in a 250 Watt Power Factor Correction you add more silicon area, one should select the minimum IGBT device rating to fulfill the application requirement. IGBT. IRG4BC30W di/dt = 39. A/uS. MOSFET. 6.5. 2.6. D2-Pak; TO-220AB; TO-220 FullPak. IRG4(B/IB/P)C30W. 12. 2.7. D2-Pak ; TO-220AB; TO-220 FullPak; TO-247AC. IRG4(B/P)C40W. 20. 2.5. TO-262
| Part Number | IRG4BC30W |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - IGBTs - Single |
| Brand | Infineon Technologies AG |
| Description | IGBT 600V 23A 100W TO220AB |
| Series | - |
| Packaging | Tube |
| IGBT Type | - |
| Voltage - Collector Emitter Breakdown (Max) | 600V |
| Current - Collector (Ic) (Max) | 23A |
| Current - Collector Pulsed (Icm) | 92A |
| Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 12A |
| Power - Max | 100W |
| Switching Energy | 130µJ (on), 130µJ (off) |
| Input Type | Standard |
| Gate Charge | 51nC |
| Td (on/off) @ 25°C | 25ns/99ns |
| Test Condition | 480V, 12A, 23 Ohm, 15V |
| Reverse Recovery Time (trr) | - |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Supplier Device Package | TO-220AB |
| Image |  |
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Yingxinyuan INT'L (Group) Limited
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2.1
Cicotex Electronics (HK) Limited
