Part Number | IRG4PH50S-EPBF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - IGBTs - Single |
Brand | Infineon Technologies AG |
Description | IGBT 1200V 57A 200W TO247AD |
Series | - |
Packaging | Tube |
IGBT Type | - |
Voltage - Collector Emitter Breakdown (Max) | 1200V |
Current - Collector (Ic) (Max) | 57A |
Current - Collector Pulsed (Icm) | 114A |
Vce(on) (Max) @ Vge, Ic | 1.7V @ 15V, 33A |
Power - Max | 200W |
Switching Energy | 1.8mJ (on), 19.6mJ (off) |
Input Type | Standard |
Gate Charge | 167nC |
Td (on/off) @ 25°C | 32ns/845ns |
Test Condition | 960V, 33A, 5 Ohm, 15V |
Reverse Recovery Time (trr) | - |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-247-3 |
Supplier Device Package | TO-247AD |
Image |
IRG4PH50S-EPBF
INFIENON
12010
1.65
N&S Electronic Co., Limited
IRG4PH50S-EPBF
Infinen
5000
2.9725
HITO TECHNOLOGY LIMITED
IRG4PH50S-EPBF
INFLNEON
6500
4.295
SAIPU ELECTRONICS(HK) TECHNOLOGY LIMITED
IRG4PH50S-EPBF
Infineon Technologies A...
32000
5.6175
ShenZhen YueXuan Technology Co,.Ltd.
IRG4PH50S-EPBF
INFINEON/IR
20000
6.94
Ande Electronics Co., Limited