Part Number | IRG8CH37K10F |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - IGBTs - Single |
Brand | Infineon Technologies AG |
Description | IGBT 1200V 100A DIE |
Series | - |
Packaging | - |
IGBT Type | - |
Voltage - Collector Emitter Breakdown (Max) | 1200V |
Current - Collector (Ic) (Max) | - |
Current - Collector Pulsed (Icm) | - |
Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 35A |
Power - Max | - |
Switching Energy | - |
Input Type | Standard |
Gate Charge | 210nC |
Td (on/off) @ 25°C | 35ns/190ns |
Test Condition | 600V, 35A, 5 Ohm, 15V |
Reverse Recovery Time (trr) | - |
Operating Temperature | - |
Mounting Type | - |
Package / Case | - |
Supplier Device Package | - |
Image |
IRG8CH37K10F
INFIENON
8867
0.51
Viassion Technology Co., Limited
IRG8CH37K10F
Infinen
15000
1.1075
IC Direct Technology Limited
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INFLNEON
100
1.705
Kinda Components Limited
IRG8CH37K10F
Infineon Technologies A...
100
2.3025
Redstar Electronic Limited
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INFINEON/IR
2500
2.9
Kang Da Electronics Co.