Description
INSULATED GATE BIPOLAR TRANSISTOR. 05/17/05 www.irf.com. 1. IRGB30B60KPbF. IRGS30B60KPbF . IRGSL30B60KPbF. VCES = 600V. IC = 50A
Part Number | IRGS30B60KPBF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - IGBTs - Single |
Brand | Infineon Technologies AG |
Description | IGBT 600V 78A 370W D2PAK |
Series | - |
Packaging | Tube |
IGBT Type | NPT |
Voltage - Collector Emitter Breakdown (Max) | 600V |
Current - Collector (Ic) (Max) | 78A |
Current - Collector Pulsed (Icm) | 120A |
Vce(on) (Max) @ Vge, Ic | 2.35V @ 15V, 30A |
Power - Max | 370W |
Switching Energy | 350µJ (on), 825µJ (off) |
Input Type | Standard |
Gate Charge | 102nC |
Td (on/off) @ 25°C | 46ns/185ns |
Test Condition | 400V, 30A, 10 Ohm, 15V |
Reverse Recovery Time (trr) | - |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | TO-263-3, D²ÂPak (2 Leads + Tab), TO-263AB |
Supplier Device Package | D2PAK |
Image |
IRGS30B60KPBF
INFIENON
7650
1.27
AoHoo Enterprise (HongKong) Co., Limited
IRGS30B60KPBF
Infinen
8000
2.2975
MY Group (Asia) Limited
IRGS30B60KPBF
INFLNEON
16000
3.325
Finestock Electronics HK Limited
IRGS30B60KPbF
Infineon Technologies A...
10000
4.3525
ZHONGGANG TECHNOLOGY (HK) INDUSTRY LIMITED
IRGS30B60KPBF
INFINEON/IR
20000
5.38
Ande Electronics Co., Limited