Part Number | IRL2910L |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 100V 55A TO-262 |
Series | HEXFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 55A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 140nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds | 3700pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 3.8W (Ta), 200W (Tc) |
Rds On (Max) @ Id, Vgs | 26 mOhm @ 29A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-262 |
Package / Case | TO-262-3 Long Leads, I²ÂPak, TO-262AA |
Image |
IRL2910L
INFIENON
1000
0.16
MY Group (Asia) Limited
IRL2910L
Infinen
5000
0.7675
G Trader Limited
IRL2910L
INFLNEON
80
1.375
Jinmingsheng Technology (HK) Co.,Limited
IRL2910L
Infineon Technologies A...
5622
1.9825
Dedicate Electronics (HK) Limited
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INFINEON/IR
13609
2.59
ATLANTIC TECHNOLOGY LIMITED