Part Number | IRL2910STRRPBF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 100V 55A D2PAK |
Series | HEXFET |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 55A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 140nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds | 3700pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | - |
Rds On (Max) @ Id, Vgs | 26 mOhm @ 29A, 10V |
Operating Temperature | - |
Mounting Type | Surface Mount |
Supplier Device Package | D2PAK |
Package / Case | TO-263-3, D²ÂPak (2 Leads + Tab), TO-263AB |
Image |
IRL2910STRRPBF
INFIENON
20855
0.36
ODK(HK) ELECTRONICS TECHNOLOGY CO.LIMITED
IRL2910STRRPBF
Infinen
3000
1.3775
HONGKONG SINIKO ELECTRONIC LIMITED
IRL2910STRRPBF
INFLNEON
15000
2.395
IC Direct Technology Limited
IRL2910STRRPBF
Infineon Technologies A...
17
3.4125
Gallop Great Holdings (Hong Kong) Limited
IRL2910STRRPBF
INFINEON/IR
28039
4.43
OCEANIA INTERNATIONAL INDUSTRIAL LIMITED