Infineon Technologies AG

Description

Aug 25, 1997 IRL3705N . HEXFET Power MOSFET. PD - 9.1370C. S. D. G. VDSS = 55V. RDS (on) = 0.01 . ID= 89A l Logic-Level Gate Drive l Advanced Aug 6, 2004 Uses IRL3705N data and test conditions. ** When mounted on 1 square PCB ( FR-4 or G-10 Material ). For recommended footprint and Jan 30, 2004 NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 3 OUTLINE CONFORMS TO JEDEC OUTLINE TOr220AB. Apr 27, 2017 Uses IRL3705N data and test conditions. Electrical Characteristics @ TJ = 25 C (unless otherwise specified). Parameter. Min. Typ. Max. Nov 6, 2006 ID = 75A. Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest processing techniques to achieve