Part Number | IRL40B215 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 40V 120A |
Series | HEXFET, StrongIRFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 40V |
Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Vgs(th) (Max) @ Id | 2.4V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs | 84nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 5225pF @ 25V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 143W (Tc) |
Rds On (Max) @ Id, Vgs | 2.7 mOhm @ 98A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220AB |
Package / Case | TO-220-3 |
Image |
IRL40B215
INFIENON
7839
0.92
HK HEQING ELECTRONICS LIMITED
IRL40B215
Infinen
4603
1.55
YK TECH ELECTRONIC CO., LIMITED
IRL40B215
INFLNEON
6821
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HXY Electronics (HK) Co.,Limited
IRL40B215
Infineon Technologies A...
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Yingxinyuan INT'L (Group) Limited
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N&S Electronic Co., Limited