Part Number | IRL530NSPBF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 100V 17A D2PAK |
Series | HEXFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 17A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 34nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds | 800pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 3.8W (Ta), 79W (Tc) |
Rds On (Max) @ Id, Vgs | 100 mOhm @ 9A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D2PAK |
Package / Case | TO-263-3, D²ÂPak (2 Leads + Tab), TO-263AB |
Image |
IRL530NSPBF
INFIENON
2009
0.26
CIS Ltd (CHECK IC SOLUTION LIMITED)
IRL530NSPBF
Infinen
7551
1.0875
Ande Electronics Co., Limited
IRL530NSPBF
INFLNEON
1999
1.915
OCEANIA INTERNATIONAL INDUSTRIAL LIMITED
IRL530NSPBF
Infineon Technologies A...
7094
2.7425
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
IRL530NSPBF
INFINEON/IR
1117
3.57
N&S Electronic Co., Limited