Description
May 11, 1999 IRL5602S . HEXFET. . Power MOSFET. Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to Mar 10, 2004 Parameter. Typ. Max. Units. R JC. Junction-to-Case. . 2.0. R JA. Junction-to- Ambient ( PCB Mounted,steady-state)**. . 40.
Part Number | IRL5602S |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET P-CH 20V 24A D2PAK |
Series | HEXFET |
Packaging | Tube |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 24A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 44nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 1460pF @ 15V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 75W (Tc) |
Rds On (Max) @ Id, Vgs | 42 mOhm @ 12A, 4.5V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D2PAK |
Package / Case | TO-263-3, D²ÂPak (2 Leads + Tab), TO-263AB |
Image |
IRL5602S
INFIENON
36798
0.03
Hong Kong H.D.W Trading Co., Limited
IRL5602S
Infinen
12500
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Bonase Electronics (HK) Co., Limited
IRL5602S
INFLNEON
9500
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SAIPU ELECTRONICS(HK) TECHNOLOGY LIMITED
IRL5602S
Infineon Technologies A...
35800
3.855
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
IRL5602S L5602S
INFINEON/IR
15262
5.13
N&S Electronic Co., Limited