Part Number | IRL60HS118 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 60V 18.5A 6PQFN |
Series | - |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 18.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Vgs(th) (Max) @ Id | 2.3V @ 10µA |
Gate Charge (Qg) (Max) @ Vgs | 8nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 660pF @ 25V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 11.5W (Tc) |
Rds On (Max) @ Id, Vgs | 17 mOhm @ 11A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 6-PQFN (2x2) |
Package / Case | 6-VDFN Exposed Pad |
Image |
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