Part Number | IRL6342PBF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 30V 9.9A 8SOIC |
Series | HEXFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 9.9A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 1.1V @ 10µA |
Gate Charge (Qg) (Max) @ Vgs | 11nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 1025pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 2.5W (Ta) |
Rds On (Max) @ Id, Vgs | 14.6 mOhm @ 9.9A, 4.5V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-SO |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Image |
IRL6342PbF
INFIENON
450
0.92
Top Electronics Co.,
IRL6342PBF
Infinen
1000
2.0475
MY Group (Asia) Limited
IRL6342PBF
INFLNEON
226000
3.175
IC Chip Co., Ltd.
IRL6342PBF
Infineon Technologies A...
445
4.3025
WIN AND WIN ELECTRONICS LIMITED
IRL6342PBF
INFINEON/IR
3160
5.43
CIS Ltd (CHECK IC SOLUTION LIMITED)